PART |
Description |
Maker |
ZXTN2018FTA |
60V, SOT23, NPN medium power transistor
|
Diodes Inc. Diodes Incorporated
|
ZX5T851G ZX5T851GTA ZX5T851GTC |
NPN Generation 5 Transistors in SOT223 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
ZETEX[Zetex Semiconductors] Diodes Incorporated
|
BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
2SD2425 2SD2425AB3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING Low freq. power amp., medium-speed switching transistor
|
NEC Corp. NEC Electronics NEC[NEC]
|
2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有 POWER TRANSISTORS(3A/60V/30W) POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
2SC5876T106Q |
Medium power transistor (60V, 0.5A)
|
Rohm
|
2SA2089S |
Medium power transistor (-60V, -0.5A)
|
Rohm
|
2SC586611 |
Medium power transistor (60V, 2A)
|
Rohm
|
2SC58661 2SC5866 |
Medium power transistor (60V, 2A)
|
ROHM[Rohm]
|
2SC5876_1 2SC5876 |
Medium power transistor (60V, 0.5A)
|
ROHM[Rohm]
|